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KSD1273QTU

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KSD1273QTU

TRANS NPN 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD1273QTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a maximum collector current (Ic) of 3A, making it suitable for power handling in various electronic designs. The DC current gain (hFE) is a minimum of 500 at 500mA collector current and 4V collector-emitter voltage, while the transition frequency is 30MHz. With a maximum power dissipation of 2W and an operating temperature up to 150°C, the KSD1273QTU is housed in a TO-220F-3 package, facilitating through-hole mounting. This transistor is commonly employed in industrial automation, consumer electronics, and power management solutions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 500mA, 4V
Frequency - Transition30MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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