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KSD1273P

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KSD1273P

TRANS NPN 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD1273P is an NPN bipolar junction transistor (BJT) designed for robust performance in power switching and amplification applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 3A, making it suitable for demanding power management tasks. With a transition frequency of 30MHz and a maximum power dissipation of 2W, the KSD1273P offers efficient operation. Its DC current gain (hFE) is rated at a minimum of 800 at 500mA and 4V. The device is housed in a TO-220F-3 package for through-hole mounting. Typical applications include power supplies, voltage regulators, and general-purpose switching circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce800 @ 500mA, 4V
Frequency - Transition30MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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