KSC945OTA
TRANS NPN 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC945OTA is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 150mA, with a maximum collector cutoff current of 100nA (ICBO). The transistor exhibits a minimum DC current gain (hFE) of 70 at 1mA collector current and 6V collector-emitter voltage. Its transition frequency is rated at 300MHz, and it can dissipate a maximum power of 250mW. The saturation voltage (Vce(sat)) is a maximum of 300mV at 10mA base current and 100mA collector current. The KSC945OTA is suitable for applications in consumer electronics and general-purpose amplification. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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