KSC945GBU
TRANS NPN 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC945GBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 (TO-226AA) package, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. It features a transition frequency of 300MHz and a maximum power dissipation of 250mW. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 1mA and 6V, and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce(sat)) is specified at 300mV maximum for an Ic of 100mA driven by 10mA base current. The KSC945GBU is suitable for use in consumer electronics and industrial control systems. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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