KSC839YBU
TRANS NPN 30V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC839YBU is an NPN bipolar junction transistor designed for high-performance applications. This component boasts a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. Featuring a transition frequency of 200MHz and a power dissipation of 250mW, it is suitable for general-purpose amplification and switching circuits. Key specifications include a minimum DC current gain (hFE) of 120 at 2mA collector current and 12V collector-emitter voltage, and a saturation voltage of 400mV at 1mA base current and 10mA collector current. The current cutoff is a maximum of 100nA (ICBO). The KSC839YBU is supplied in a TO-92-3 package, facilitating through-hole mounting. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 12V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |
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