KSC5502DTTU
TRANS NPN 600V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC5502DTTU is a high-voltage NPN bipolar junction transistor (BJT) with a 600V collector-emitter breakdown voltage. This through-hole component, packaged in a TO-220-3, offers a continuous collector current capability of 2A and a maximum power dissipation of 50W. It features a transition frequency of 11MHz and a minimum DC current gain (hFE) of 4 at 1A collector current and 1V Vce. Saturation voltage is specified at 1.5V maximum for 200mA base current and 1A collector current. The KSC5502DTTU is suitable for applications in power supply circuits, lighting ballasts, and general-purpose high-voltage switching. It is supplied in a tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 1A, 1V |
| Frequency - Transition | 11MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 50 W |
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