KSC5367FTU
TRANS NPN 800V 3A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC5367FTU is an NPN bipolar junction transistor designed for high voltage applications. This through-hole component features a maximum collector current (Ic) of 3 A and a high collector-emitter breakdown voltage (Vce) of 800 V. With a maximum power dissipation of 40 W and an operating junction temperature up to 150°C, it is suitable for demanding power supply circuits, lighting ballasts, and general-purpose high-voltage switching. The TO-220F-3 package offers robust thermal performance. Key electrical specifications include a minimum DC current gain (hFE) of 12 at 400mA and 3V, and a Vce(sat) of 2.5V at 200mA and 1A.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 20µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 400mA, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 40 W |
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