KSC5305DFTTU
TRANS NPN 400V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC5305DFTTU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This device features a maximum collector-emitter breakdown voltage of 400V and a continuous collector current capability of 5A, with a maximum power dissipation of 75W. The KSC5305DFTTU exhibits a minimum DC current gain (hFE) of 8 at 2A and 1V. Its saturation voltage (Vce(sat)) is specified at a maximum of 500mV for an operating point of 400mA base current and 2A collector current. The transistor operates within a junction temperature range of up to 150°C. Packaged in a standard TO-220-3 through-hole configuration, this component is suitable for power supply circuits, lighting ballasts, and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 75 W |
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