KSC5042FYDTU
TRANS NPN 900V 0.1A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC5042FYDTU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a maximum collector-emitter breakdown voltage of 900V and a continuous collector current capability of 100mA. It offers a power dissipation of 6W and a junction temperature rating of 150°C. The DC current gain (hFE) is a minimum of 30 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 5V at 4mA base current and 20mA collector current. The transistor is housed in a TO-220F-3 (Y-Forming) package. This component is utilized in power supply units, lighting controls, and motor drive circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 4mA, 20mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Power - Max | 6 W |
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