KSC5042FTU
TRANS NPN 900V 0.1A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC5042FTU is an NPN bipolar junction transistor designed for high voltage applications. This component features a maximum collector-emitter breakdown voltage of 900 V and a continuous collector current capability of 100 mA. With a maximum power dissipation of 6 W and an operating junction temperature of 150°C, it is suitable for demanding environments. The device is packaged in a TO-220F-3 through-hole configuration, facilitating integration into existing board designs. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 10 mA and 5 V, and a collector-emitter saturation voltage (Vce(sat)) of 5 V at 4 mA base current and 20 mA collector current. This transistor finds utility in power supply units and high-voltage switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 4mA, 20mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Power - Max | 6 W |
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