KSC5030FRTU
TRANS NPN 800V 6A TO3PFManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC5030FRTU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a robust TO-3PF package, ensuring reliable thermal management and mechanical stability. With a maximum collector-emitter breakdown voltage of 800V and a continuous collector current capability of 6A, it is well-suited for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 10 at 600mA and 5V, and a saturation voltage (Vce(sat)) of 2V at 3A collector current and 600mA base current. Its maximum power dissipation is rated at 60W. This transistor is commonly utilized in power supply units, lighting control, and industrial motor drive applications where high voltage handling and efficient switching are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 600mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 60 W |