KSC5019NTA
TRANS NPN 10V 2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC5019NTA is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, packaged in a TO-92-3 (TO-226AA) case with formed leads, offers a collector current (Ic) capability of up to 2 A and a collector-emitter breakdown voltage (Vce(max)) of 10 V. With a transition frequency (fT) of 150 MHz and a maximum power dissipation of 750 mW, it is suitable for power switching and amplifier circuits. Key electrical characteristics include a low saturation voltage of 500mV at 50mA base current and 2A collector current, and a minimum DC current gain (hFE) of 300 at 500mA collector current and 1V collector-emitter voltage. The device exhibits a collector cutoff current (ICBO) of 100nA and operates at an ambient temperature up to 150°C (TJ). This component finds application in consumer electronics, industrial control systems, and general-purpose amplification. The KSC5019NTA is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 1V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 10 V |
| Power - Max | 750 mW |
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