KSC4010RTU
TRANS NPN 120V 6A TO3PNManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC4010RTU is an NPN bipolar junction transistor designed for robust performance. This component offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of up to 6A. With a maximum power dissipation of 60W and a transition frequency of 30MHz, it is suitable for applications requiring significant power handling and moderate switching speeds. The DC current gain (hFE) is a minimum of 55 at 1A and 5V. Its saturation voltage (Vce(sat)) is rated at a maximum of 2.5V with a base current of 500mA and a collector current of 5A. The device features a low collector cutoff current (ICBO) of 10µA. Packaged in a TO-3PN (TO-3P-3, SC-65-3) for through-hole mounting, the KSC4010RTU operates reliably up to a junction temperature of 150°C. This transistor finds utility in power supply regulation, audio amplification, and general-purpose switching applications within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3PN |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 60 W |
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