Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

KSC4010OTU

Banner
productimage

KSC4010OTU

TRANS NPN 120V 6A TO3PN

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi KSC4010OTU is an NPN Bipolar Junction Transistor (BJT) designed for high-power switching and amplification applications. This component offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 6A, with a maximum power dissipation of 60W. It features a transition frequency of 30MHz and a minimum DC current gain (hFE) of 80 at 1A collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 2.5V for a base current of 500mA and collector current of 5A. The transistor is housed in a TO-3PN package, suitable for through-hole mounting. This device finds application in power control, linear regulation, and audio amplification circuits within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Frequency - Transition30MHz
Supplier Device PackageTO-3PN
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max60 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126