KSC3953DSTU
TRANS NPN 120V 0.2A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC3953DSTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 200mA. It features a transition frequency of 400MHz and a maximum power dissipation of 1.3W. The device exhibits a minimum DC current gain (hFE) of 60 at 10mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified as a maximum of 1V at 3mA base current and 30mA collector current. With a collector cutoff current (ICBO) of 100nA, it is suitable for applications requiring low leakage. The KSC3953DSTU is supplied in a TO-126-3 package for through-hole mounting and operates at junction temperatures up to 150°C. It finds utility in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 1.3 W |
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