Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

KSC3953DS

Banner
productimage

KSC3953DS

TRANS NPN 120V 0.2A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi KSC3953DS is an NPN bipolar junction transistor designed for robust performance in demanding applications. Featuring a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 200mA, this device exhibits a transition frequency of 400MHz, making it suitable for RF amplification and switching circuits. With a maximum power dissipation of 1.3W and a junction temperature rating of 150°C, it offers reliable operation. The device boasts a minimum DC current gain (hFE) of 60 at 10mA and 10V, along with a collector cutoff current of 100nA. Supplied in a TO-126-3 (TO-225AA) through-hole package, the KSC3953DS finds application in general-purpose amplification and switching across various industrial and consumer electronics segments.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 10V
Frequency - Transition400MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max1.3 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BC547BTAR

TRANS NPN 45V 0.1A TO92-3

product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
BD13716S

TRANS NPN 60V 1.5A TO126-3