KSC3552OTU
TRANS NPN 800V 12A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC3552OTU is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current applications. This device features a maximum collector-emitter breakdown voltage of 800 V and a continuous collector current rating of 12 A. With a transition frequency of 15 MHz and a maximum power dissipation of 150 W, the KSC3552OTU is suitable for power switching and amplification circuits. The minimum DC current gain (hFE) is 20 at 800 mA and 5 V. Saturation voltage (Vce Saturation) is a maximum of 2V at 1.2A and 6A. Collector cutoff current (ICBO) is a maximum of 10µA. The transistor is housed in a TO-3P package, designed for through-hole mounting, and operates at junction temperatures up to 150°C. This component finds application in power supplies, lighting ballasts, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.2A, 6A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 800mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 150 W |
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