KSC3552NTU
TRANS NPN 800V 12A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi KSC3552NTU is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, packaged in a TO-3P, offers a maximum collector current of 12A and a collector-emitter breakdown voltage of 800V. With a power dissipation of 150W and a transition frequency of 15MHz, it is suitable for demanding switching and amplification tasks. Key parameters include a minimum DC current gain (hFE) of 10 at 800mA and 5V, and a saturation voltage (Vce Sat) of 2V at 1.2A and 6A. The component exhibits a collector cutoff current (ICBO) of 10µA and operates at temperatures up to 150°C. Industries utilizing this device often include industrial power supplies and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.2A, 6A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 800mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
BD13716S
TRANS NPN 60V 1.5A TO126-3
