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KSC3503DSTSTU

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KSC3503DSTSTU

TRANS NPN 300V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC3503DSTSTU is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. With a transition frequency of 150MHz, it is suitable for various amplification and switching tasks. The device offers a minimum DC current gain (hFE) of 60 at 10mA collector current and 10V collector-emitter voltage. Its maximum power dissipation is 7W, and it operates within a temperature range of -55°C to 150°C. The KSC3503DSTSTU is packaged in a TO-126-3 (TO-225AA) through-hole configuration, commonly found in power supply regulation, audio amplification, and general-purpose switching circuits within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max7 W

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