KSC3503DS
TRANS NPN 300V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC3503DS is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. With a transition frequency of 150MHz, it is suitable for intermediate frequency amplification and switching circuits. The device offers a minimum DC current gain (hFE) of 60 at 10mA collector current and 10V collector-emitter voltage. Its maximum power dissipation is rated at 7W, and it operates within an ambient temperature range of -55°C to 150°C. The KSC3503DS is housed in a TO-126-3 (TO-225AA) package, facilitating through-hole mounting. This transistor finds application in power supply circuits, audio amplifiers, and low-frequency switching systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 7 W |
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