Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

KSC3502ESTU

Banner
productimage

KSC3502ESTU

TRANS NPN 200V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi KSC3502ESTU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 200 V collector-emitter breakdown voltage and a continuous collector current capability of 100 mA. With a transition frequency (fT) of 150 MHz, it is suitable for moderate-frequency circuits. The device dissipates a maximum power of 1.2 W and is housed in a TO-126-3 package, requiring through-hole mounting. Its DC current gain (hFE) is specified at a minimum of 100 at 10 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600 mV at 2 mA base current and 20 mA collector current. The KSC3502ESTU is commonly utilized in consumer electronics, industrial control systems, and power supply circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max1.2 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MPSA92ZL1G

TRANS PNP 300V 0.5A TO92

product image
MJE371G

TRANS PNP 40V 4A TO126

product image
MMBTA06_D87Z

TRANS NPN 80V 0.5A SOT23-3