KSC3502ES
TRANS NPN 200V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number KSC3502ES. This through-hole device features a 200V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 100 at 10mA and 10V, with a transition frequency of 150MHz. The KSC3502ES has a maximum power dissipation of 1.2W and a saturation voltage of 600mV at 2mA/20mA. The package is TO-126-3 (TO-225AA). This component is suitable for applications in industrial and consumer electronics. It operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.2 W |
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