KSC3076YTU
TRANS NPN 50V 2A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC3076YTU is an NPN Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 2A, with a low collector cutoff current of 1µA (ICBO). Featuring a minimum DC current gain (hFE) of 120 at 500mA and 2V, it provides efficient amplification. The KSC3076YTU operates with a transition frequency of 100MHz and a maximum power dissipation of 1W. Its saturation voltage is rated at a maximum of 500mV at 50mA base current and 1A collector current. The device is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) suitable for through-hole mounting and can operate up to 150°C junction temperature. This transistor is frequently utilized in power switching, voltage regulation, and general-purpose amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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