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KSC2752OS

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KSC2752OS

TRANS NPN 400V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC2752OS is a high-voltage NPN bipolar junction transistor (BJT) designed for robust performance. This through-hole component, packaged in a TO-126-3 (TO-225AA) case, offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of up to 500mA. With a maximum power dissipation of 1W and a junction temperature rating of 150°C, it is suitable for applications requiring reliable switching and amplification. The device exhibits a minimum DC current gain (hFE) of 30 at 50mA and 5V, and a saturation voltage of 1V at 60mA base current and 300mA collector current. The KSC2752OS finds utility in power supply regulation, audio amplification, and general-purpose switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 60mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 5V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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