KSC2751RTU
TRANS NPN 400V 15A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2751RTU is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. Featuring a maximum collector-emitter breakdown voltage (Vce) of 400V and a continuous collector current (Ic) capability of 15A, this device offers substantial power handling with a maximum dissipation of 120W. The transistor exhibits a minimum DC current gain (hFE) of 20 at 2A and 5V, ensuring efficient amplification and switching. Its saturation voltage (Vce(sat)) is rated at 1V maximum for 2A base current and 10A collector current, minimizing power loss during conduction. With a collector cutoff current (Icbo) of 100µA maximum and an operating junction temperature up to 150°C, the KSC2751RTU is suitable for demanding environments. Packaged in a TO-3P through-hole configuration, this component is commonly utilized in power supply units, motor control, and general-purpose high-voltage switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 120 W |
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