KSC2690AYSTSTU
TRANS NPN 160V 1.2A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2690AYSTSTU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a 160V collector-emitter breakdown voltage and a maximum collector current of 1.2A, ensuring ample capacity for power handling. With a transition frequency of 155MHz and a maximum power dissipation of 1.2W, it is suitable for use in power supply circuits, audio amplification, and general-purpose switching within the industrial and consumer electronics sectors. The device exhibits a minimum DC current gain (hFE) of 160 at 300mA and 5V, and a saturation voltage (Vce) of 700mV at 200mA and 1A. Packaged in a TO-126-3 (TO-225AA) through-hole configuration and supplied in tubes, the KSC2690AYSTSTU operates up to a junction temperature of 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 300mA, 5V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1.2 W |
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