KSC2690AOS
TRANS NPN 160V 1.2A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2690AOS is an NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting in a TO-126-3 package. This component offers a collector-emitter breakdown voltage of 160V and a continuous collector current rating of 1.2A. It features a minimum DC current gain (hFE) of 100 at 300mA and 5V, with a transition frequency of 155MHz. The maximum power dissipation is 1.2W, and the device operates at an ambient temperature up to 150°C. Saturation voltage is specified at 700mV maximum at 200mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 1µA. This transistor is utilized in power supply, audio amplification, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 300mA, 5V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1.2 W |
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