KSC2682YSTU
TRANS NPN 180V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2682YSTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 180V and a continuous collector current capability of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 1.2W, the KSC2682YSTU is suitable for use in consumer electronics and industrial control systems. It offers a minimum DC current gain (hFE) of 160 at 10mA collector current and 5V collector-emitter voltage. The transistor is housed in a TO-126-3 package, facilitating through-hole mounting. Key parameters include a collector cutoff current (ICBO) of 1µA and a Vce saturation of 500mV at 5mA base current and 50mA collector current. Operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 1.2 W |
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