KSC2682YS
TRANS NPN 180V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2682YS is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-126-3 package, offers a high collector-emitter breakdown voltage of 180V and a continuous collector current capability of 100mA. It features a transition frequency of 200MHz and a maximum power dissipation of 1.2W, making it suitable for power switching and amplification circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 10mA collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 500mV at 5mA base current and 50mA collector current. The device exhibits a low collector cutoff current of 1µA (ICBO) and operates reliably up to a junction temperature of 150°C. This transistor finds application in various industrial and consumer electronics sectors requiring dependable signal control and power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 1.2 W |
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