KSC2682OS
TRANS NPN 180V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2682OS is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector-emitter breakdown voltage of 180V and a continuous collector current capability of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 1.2W, the KSC2682OS is suitable for use in power supply circuits, audio amplifiers, and general switching tasks across various industrial and consumer electronics sectors. The device is supplied in a TO-126-3 package. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA, 5V and a collector cutoff current (ICBO) of 1µA (Max). Saturation voltage (Vce Sat) is specified at 500mV (Max) with a base current of 5mA and collector current of 50mA. This component operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 1.2 W |
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