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KSC2518O

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KSC2518O

TRANS NPN 400V 4A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC2518O is an NPN bipolar junction transistor designed for high-voltage applications. This component offers a maximum collector current of 4A and a collector-emitter breakdown voltage of 400V, with a maximum power dissipation of 40W. It features a minimum DC current gain (hFE) of 30 at 300mA collector current and 5V collector-emitter voltage. The transistor is housed in a standard TO-220-3 through-hole package, facilitating easy integration into printed circuit boards. The KSC2518O is suitable for use in power supply regulation, switching applications, and general-purpose amplification across various industrial and consumer electronics sectors. It exhibits a Vce saturation of 1V at 300mA collector current and 1.5A base current, with a collector cutoff current (ICBO) of 10µA. The operating junction temperature can reach up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max40 W

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