KSC2383OBU
TRANS NPN 160V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2383OBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 160V and a continuous collector current rating of 1A. Its transition frequency is 100MHz, with a maximum power dissipation of 900mW. The KSC2383OBU is housed in a TO-92-3 package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 200mA and 5V, and a collector cutoff current of 1µA (ICBO). The Vce saturation voltage is specified at 1.5V maximum for 50mA base current and 500mA collector current. This device is utilized in various industrial and consumer electronics, including power supply circuits, audio amplifiers, and lighting control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 900 mW |
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