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KSC2334RTU

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KSC2334RTU

TRANS NPN 100V 7A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi KSC2334RTU is an NPN Bipolar Junction Transistor (BJT) designed for power switching applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 7A, with a maximum power dissipation of 1.5W. The DC current gain (hFE) is a minimum of 40 at 3A and 5V. The transistor exhibits a Vce(sat) of 600mV at 500mA and 5A. It is supplied in a TO-220-3 through-hole package, suitable for mounting on printed circuit boards. The operating junction temperature range extends to 150°C. This device finds application in power supplies, audio amplifiers, and general-purpose switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 3A, 5V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

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