KSC2331YSHTA
TRANS NPN 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2331YSHTA is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 700mA. It features a minimum DC current gain (hFE) of 120 at 50mA and 2V, with a transition frequency of 50MHz. The device dissipates a maximum power of 1W and operates at temperatures up to 150°C. Its saturation voltage (Vce(sat)) is a maximum of 700mV at 50mA collector current and 50mA base current. The KSC2331YSHTA is supplied in Tape & Box packaging. This transistor is commonly utilized in industrial control, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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