KSC2330YTA
TRANS NPN 300V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2330YTA is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. With a transition frequency of 50MHz and a maximum power dissipation of 1W, it is suitable for use in various electronic designs. The KSC2330YTA offers a minimum DC current gain (hFE) of 120 measured at 20mA collector current and 10V collector-emitter voltage. It presents a saturation voltage of 500mV at 1mA base current and 10mA collector current. The transistor is housed in a TO-92-3 package, facilitating through-hole mounting. Typical applications include power supply circuits, lighting control, and general switching functions within industrial and consumer electronics. The component is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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