KSC2330ASHBU
TRANS NPN 400V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2330ASHBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 100mA. With a transition frequency of 50MHz and a power dissipation of 1W, it is suitable for use in power supply circuits, lighting control, and industrial automation. The device exhibits a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. It is supplied in a TO-92-3 through-hole package, with a maximum collector-emitter saturation voltage of 500mV at 1mA base current and 10mA collector current. The operating junction temperature range is up to 150°C. The KSC2330ASHBU is available in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
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