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KSC2330ABU

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KSC2330ABU

TRANS NPN 400V 0.1A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC2330ABU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a collector-emitter breakdown voltage of 400 V and a maximum collector current of 100 mA. With a transition frequency of 50 MHz and a maximum power dissipation of 1 W, the KSC2330ABU is suitable for general-purpose amplification and switching in a wide range of electronic designs. It offers a minimum DC current gain (hFE) of 40 at 20 mA collector current and 10 V collector-emitter voltage. The device operates within a temperature range of 150°C (TJ) and is supplied in a TO-92-3 package. This component is commonly utilized in power supply circuits, lighting control, and general analog signal processing applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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