KSC2328AYTA
TRANS NPN 30V 2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2328AYTA is an NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 2A. With a power dissipation of 1W and a transition frequency of 120MHz, it is suitable for various amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 160 at 500mA and 2V, a collector cutoff current (ICBO) of 100µA (max), and a Vce saturation of 2V (max) at 30mA base current and 1.5A collector current. The operating temperature range extends to 150°C (TJ). This transistor is commonly utilized in consumer electronics and industrial control systems. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |