KSC2316YTA
TRANS NPN 120V 0.8A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2316YTA is a general-purpose NPN bipolar junction transistor designed for a variety of applications. This component features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 800mA. With a transition frequency of 120MHz, it is suitable for switching and amplification tasks in consumer electronics, industrial controls, and telecommunications infrastructure. The device dissipates a maximum power of 900mW and is packaged in a TO-92-3 through-hole configuration, supplied on tape and reel for automated assembly. Key parameters include a minimum DC current gain (hFE) of 120 at 100mA and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 1V at 50mA and 500mA. The maximum collector cutoff current (ICBO) is 100nA. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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