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KSC2316OBU

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KSC2316OBU

TRANS NPN 120V 0.8A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSC2316OBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 800mA. It offers a transition frequency of 120MHz and a maximum power dissipation of 900mW. The device exhibits a minimum DC current gain (hFE) of 80 at 100mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce (sat)) is specified as 1V maximum at 50mA base current and 500mA collector current. It is supplied in a TO-92-3 package, suitable for use in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Frequency - Transition120MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max900 mW

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