KSC2310YTA
TRANS NPN 150V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2310YTA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 150V and a continuous collector current (Ic) capability of 50mA. With a transition frequency (fT) of 100MHz, it is suitable for moderate frequency signal processing. The KSC2310YTA offers a minimum DC current gain (hFE) of 120 at 10mA collector current and 5V collector-emitter voltage. Its saturation voltage (Vce(sat)) is 500mV maximum at 1mA base current and 10mA collector current. The transistor is housed in a TO-92-3 package, facilitating through-hole mounting. Its power dissipation is rated at 800mW. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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