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KSC2310YNBU

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KSC2310YNBU

TRANS NPN 150V 0.05A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSC2310YNBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 150V and a continuous collector current (Ic) capability of 50mA. The transistor exhibits a minimum DC current gain (hFE) of 120 at 10mA and 5V, with a transition frequency (fT) of 100MHz. Power dissipation is rated at 800mW. The KSC2310YNBU is housed in a TO-92-3 (TO-226-3, TO-92-3 Long Body) package, suitable for through-hole mounting. It operates across a junction temperature range up to 150°C. This device finds application in various consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 10mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max800 mW

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