KSC2310RTA
TRANS NPN 150V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC2310RTA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 50 mA. It offers a transition frequency of 100 MHz and a maximum power dissipation of 800 mW. The minimum DC current gain (hFE) is rated at 40 at 10 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 500 mV under 1 mA base current and 10 mA collector current conditions. The device exhibits a collector cutoff current (ICBO) of 100 nA. Packaged in a TO-92-3 (TO-226-3) through-hole configuration with formed leads, this transistor is supplied in Tape & Box (TB) packaging. It is suitable for use in industrial and consumer electronics, particularly in areas requiring low-power amplification and switching. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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