KSC2310RBU
TRANS NPN 150V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC2310RBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a 150V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 50mA. Featuring a transition frequency of 100MHz and a maximum power dissipation of 800mW, the KSC2310RBU is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. It utilizes a TO-92-3 through-hole package, with a specified DC current gain (hFE) of 40 at 10mA collector current and 5V collector-emitter voltage. The device exhibits a Vce(sat) of 500mV at 1mA base current and 10mA collector current, and a collector cutoff current (ICBO) of 100nA. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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