KSC1845ETA
TRANS NPN 120V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1845ETA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 120V collector-emitter breakdown voltage and a maximum collector current of 50mA, making it suitable for low-power signal conditioning. It offers a transition frequency of 110MHz and a significant DC current gain (hFE) of at least 400 at 1mA collector current and 6V collector-emitter voltage. The device dissipates a maximum of 500mW and operates within a junction temperature range of up to 150°C. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, the KSC1845ETA is supplied in Tape & Box packaging. This transistor finds utility in consumer electronics, industrial control systems, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 1mA, 6V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 500 mW |
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