KSC1845EBU
TRANS NPN 120V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSC1845EBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 50mA. It features a transition frequency of 110MHz and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 400 at 1mA collector current and 6V collector-emitter voltage. Saturation voltage is specified at a maximum of 300mV for 1mA base current and 10mA collector current. The KSC1845EBU is provided in a TO-92-3 package suitable for through-hole mounting and operates across a junction temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 1mA, 6V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 500 mW |
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