KSC1815GRBU
TRANS NPN 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1815GRBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. With a transition frequency of 80MHz, it is suitable for moderate frequency signal processing. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage. Maximum power dissipation is rated at 400mW. The KSC1815GRBU is housed in a TO-92-3 through-hole package, facilitating ease of mounting in various electronic assemblies. Its operating junction temperature range extends to 150°C. This transistor finds utility in consumer electronics, communication systems, and industrial control equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 400 mW |
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