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KSC1675YBU

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KSC1675YBU

TRANS NPN 30V 0.05A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSC1675YBU is a Bipolar Junction Transistor (BJT) with an NPN configuration. This device features a collector-emitter breakdown voltage of 30V and a maximum collector current of 50mA. It offers a transition frequency of 300MHz and a power dissipation of 250mW. The DC current gain (hFE) is specified at a minimum of 120 at 1mA collector current and 6V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 300mV at 1mA base current and 10mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This component is supplied in a TO-92-3 package for through-hole mounting. Applications for this transistor include general-purpose amplification and switching circuits in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition300MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max250 mW

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