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KSC1675RBU

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KSC1675RBU

TRANS NPN 30V 0.05A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSC1675RBU is an NPN bipolar junction transistor designed for general-purpose applications. This component features a collector-emitter breakdown voltage of 30 V and a continuous collector current capability of 50 mA. With a transition frequency of 300 MHz, it is suitable for signal amplification circuits. The device dissipates a maximum power of 250 mW and is housed in a TO-92-3 (TO-226-3) through-hole package. Key DC characteristics include a minimum DC current gain (hFE) of 40 at 1 mA and 6 V, and a collector cutoff current (ICBO) of 100 nA. Saturation voltage (Vce(sat)) is specified at a maximum of 300 mV at 1 mA base current and 10 mA collector current. This device is commonly utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1mA, 6V
Frequency - Transition300MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max250 mW

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