KSC1675OBU
TRANS NPN 30V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSC1675OBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 50mA. With a transition frequency of 300MHz, it is suitable for moderate frequency operations. The device has a maximum power dissipation of 250mW and a low collector cutoff current of 100nA (ICBO). Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 1mA collector current and 6V collector-emitter voltage, and a Vce(sat) of 300mV at 1mA base current and 10mA collector current. The KSC1675OBU is housed in a standard TO-92-3 (TO-226-3) through-hole package and is supplied in bulk packaging. This transistor finds application in various electronic circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |
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